Sony Patent | Glass wiring substrate and component-mounted glass wiring substrate

Patent: Glass wiring substrate and component-mounted glass wiring substrate

Drawings: Click to check drawins

Publication Number: 20210068266

Publication Date: 20210304

Applicant: Sony

Abstract

A glass wiring substrate includes: a glass substrate 10 including a first surface 10A and a second surface 10B, having a first wiring portion 20 formed on a first surface side, and having a second wiring portion 30 formed on a second surface side; a through hole 40 formed in a region of the glass substrate 10 in which neither the first wiring portion 20 nor the second wiring portion 30 is formed; and a through hole portion 42 formed on an inner wall 41 of the through hole 40, having one end extending to the first wiring portion 20, having another end extending to the second wiring portion 30, and including a hollow portion 43 corresponding to a central portion of the through hole 40, in which a filling member 61 blocking at least a part of the through hole 40 is provided on a region 10C surrounding an edge portion of the through hole 40 of the first surface 10A, and the filling member 61 includes a glass material.

Claims

  1. A glass wiring substrate comprising: a glass substrate including a first surface and a second surface facing the first surface, having a first wiring portion formed on a first surface side, and having a second wiring portion formed on a second surface side; a through hole formed in a region of the glass substrate in which neither the first wiring portion nor the second wiring portion is formed; and a through hole portion formed on an inner wall of the through hole, having one end extending to the first wiring portion, having another end extending to the second wiring portion, and including a hollow portion corresponding to a central portion of the through hole, wherein a filling member that blocks at least a part of the through hole is provided on a region surrounding an edge portion of the through hole of the first surface, and the filling member includes a glass material.

  2. The glass wiring substrate according to claim 1, wherein the filling member extends through an inside of the through hole.

  3. The glass wiring substrate according to claim 2, wherein the filling member extends from the inside of the through hole onto a region surrounding an edge portion of the through hole of the second surface.

  4. The glass wiring substrate according to claim 1, wherein a second filling member including a glass material and blocking the through hole is provided on a region surrounding an edge portion of the through hole of the second surface.

  5. The glass wiring substrate according to claim 1, wherein when a linear expansion coefficient of the glass substrate is defined as CTE.sub.1 and a linear expansion coefficient of the filling member is defined as CTE.sub.2, 0.01.ltoreq.CTE.sub.2/CTE.sub.1.ltoreq.5 is satisfied.

  6. The glass wiring substrate according to claim 1, wherein when a Young’s modulus of the glass substrate is defined as E.sub.1 and a Young’s modulus of the filling member is defined as E.sub.2, 0.1.ltoreq.E.sub.2/E.sub.1.ltoreq.10 is satisfied.

  7. A glass wiring substrate comprising: a glass substrate including a first surface and a second surface facing the first surface, having a first wiring portion formed on a first surface side, and having a second wiring portion formed on a second surface side; a through hole formed in a region of the glass substrate in which neither the first wiring portion nor the second wiring portion is formed; and a through hole portion formed on an inner wall of the through hole, having one end extending to the first wiring portion, having another end extending to the second wiring portion, and including a hollow portion corresponding to a central portion of the through hole, wherein a filling member that blocks at least a part of the through hole is provided on a region surrounding an edge portion of the through hole of the first surface, and when a linear expansion coefficient of the glass substrate is defined as CTE.sub.1 and a linear expansion coefficient of the filling member is defined as CTE.sub.2, 0.01.ltoreq.CTE.sub.2/CTE.sub.1.ltoreq.5 is satisfied.

  8. The glass wiring substrate according to claim 7, wherein the filling member extends through an inside of the through hole.

  9. The glass wiring substrate according to claim 8, wherein the filling member extends from the inside of the through hole onto a region surrounding an edge portion of the through hole of the second surface.

  10. The glass wiring substrate according to claim 7, wherein a second filling member including a glass material and blocking the through hole is provided on a region surrounding an edge portion of the through hole of the second surface.

  11. The glass wiring substrate according to claim 7, wherein when a Young’s modulus of the glass substrate is defined as E.sub.1 and a Young’s modulus of the filling member is defined as E.sub.2, 0.1.ltoreq.E.sub.2/E.sub.1.ltoreq.10 is satisfied.

  12. A component-mounted glass wiring substrate comprising: a glass substrate including a first surface and a second surface facing the first surface, having a first wiring portion formed on a first surface side, and having a second wiring portion formed on a second surface side; a through hole formed in a region of the glass substrate in which neither the first wiring portion nor the second wiring portion is formed; a through hole portion formed on an inner wall of the through hole, having one end extending to the first wiring portion, having another end extending to the second wiring portion, and including a hollow portion corresponding to a central portion of the through hole; and an electronic component mounted on at least one of the first wiring portion or the second wiring portion, wherein a filling member that blocks at least a part of the through hole is provided on a region surrounding an edge portion of the through hole of the first surface, and the filling member includes a glass material.

  13. The component-mounted glass wiring substrate according to claim 12, wherein the electronic component includes a light-emitting element and a driving semiconductor device that drives the light-emitting element, the light-emitting element is mounted on one wiring portion of the first wiring portion or the second wiring portion, and the driving semiconductor device is mounted on another wiring portion of the first wiring portion or the second wiring portion.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a glass wiring substrate and a component-mounted glass wiring substrate.

BACKGROUND ART

[0002] In a conventional printed wiring substrate, a first wiring portion formed on a first surface of the printed wiring substrate and a second wiring portion formed on a second surface of the printed wiring substrate facing the first surface are connected via a through hole portion.

[0003] On the other hand, there is a known display apparatus substrate disclosed in, for example, Japanese Patent Application Laid-open No. 2009-037164, in which a wiring portion is formed only on one surface of a glass substrate and a plurality of light-emitting elements, specifically, a plurality of light-emitting diodes (LEDs) is mounted on the wiring portion. In such a display apparatus substrate, high integration of the wiring portion is achieved by miniaturization of the wiring portion. Specifically, a wiring pitch of 30 .mu.m is achieved in this patent publication document. In addition, the wiring portion is connected to an external circuit in a so-called frame portion of the display apparatus. However, in such a structure, there is a case where manufacture of a display apparatus having a narrow frame may be subject to some constraints, and application to a tiled display apparatus formed by arraying a plurality of display apparatus substrates may be difficult.

[0004] There is a known structure disclosed in, for example, Japanese Patent Laid-Open No. 2016-167491, in which a first wiring portion is formed on a first surface of a glass substrate constituting a display apparatus substrate, a second wiring portion is formed on a second surface of the glass substrate facing the first surface, and the first wiring portion and the second wiring portion are connected via a through hole portion provided in the glass substrate.

CITATION LIST

Patent Document

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2009-037164

[0006] Patent Document 2: Japanese Patent Application Laid-Open No. 2016-167491

SUMMARY OF THE INVENTION

Problems to be Solved by the Invention

[0007] By the way, a glass substrate constituting a display apparatus substrate is heated to two hundred and several tens of degrees Celsius (for example, about 260.degree. C.) in a manufacturing step of the display apparatus substrate (e.g., reflow soldering step). At this time, due to a difference between a linear expansion coefficient of the glass substrate and a linear expansion coefficient of a material constituting a first wiring portion or a second wiring portion (specifically, copper), there may be a problem that stress is applied to the glass substrate and the glass substrate is damaged. In particular, a region of the glass substrate including a through hole portion is likely to be damaged due to microcracks generated in the glass substrate at the time of forming a through hole for the through hole portion.

[0008] Therefore, the present disclosure is directed to providing: a glass wiring substrate having a configuration and a structure in which particularly a region in a vicinity of a through hole portion of a glass substrate is hardly damaged; and a component-mounted glass wiring substrate including the glass wiring substrate.

Solutions to Problems

[0009] A glass wiring substrate according to a first aspect and a second aspect of the present disclosure to achieve the above-described object includes:

[0010] a glass substrate including a first surface and a second surface facing the first surface, having a first wiring portion formed on a first surface side, and having a second wiring portion formed on a second surface side;

[0011] a through hole formed in a region of the glass substrate in which neither the first wiring portion nor the second wiring portion is formed; and

[0012] a through hole portion formed on an inner wall of the through hole, having one end extending to the first wiring portion, having another end extending to the second wiring portion, and including a hollow portion corresponding to a central portion of the through hole, in which

[0013] a filling member that blocks at least a part of the through hole is provided on a region surrounding an edge portion of the through hole of the first surface.

[0014] In addition, in the glass wiring substrate according to the first aspect of the present disclosure, the filling member includes a glass material, and in the glass wiring substrate according to the second aspect of the present disclosure, when a linear expansion coefficient of the glass substrate is defined as CTE.sub.1 and a linear expansion coefficient of the filling member is defined as CTE.sub.2,

0.01.ltoreq.CTE.sub.2/CTE.sub.1.ltoreq.5

[0015] is satisfied.

[0016] A component-mounted glass wiring substrate of the present disclosure to achieve the above-described object includes:

[0017] a glass substrate including a first surface and a second surface facing the first surface, having a first wiring portion formed on a first surface side, and having a second wiring portion formed on a second surface side;

[0018] a through hole formed in a region of the glass substrate in which neither the first wiring portion nor the second wiring portion is formed;

[0019] a through hole portion formed on an inner wall of the through hole, having one end extending to the first wiring portion, having another end extending to the second wiring portion, and including a hollow portion corresponding to a central portion of the through hole; and

[0020] an electronic component mounted on at least one of the first wiring portion or the second wiring portion, in which

[0021] a filling member that blocks at least a part of the through hole is provided on a region surrounding an edge portion of the through hole of the first surface,

[0022] the filling member includes a glass material, or

[0023] when a linear expansion coefficient of the glass substrate is defined CTE.sub.1 and a linear expansion coefficient of the filling member is defined as CTE.sub.2,

0.01.ltoreq.CTE.sub.2/CTE.sub.1.ltoreq.5

[0024] is satisfied.

BRIEF DESCRIPTION OF DRAWINGS

[0025] FIG. 1 is a schematic partial end surface view of a glass wiring substrate, a component-mounted glass wiring substrate, and a display apparatus substrate according to Example 1.

[0026] FIGS. 2A, 2B, and 2C are schematic partial end surface views of a vicinity of a through hole portion in a glass wiring substrate, a component-mounted glass wiring substrate, and a display apparatus substrate according to Example 2, a modified example of Example 2, and another modified example of Example 2, respectively.

[0027] FIGS. 3A and 3B are schematic partial end surface views of a light-emitting element (light-emitting diode) according to Example 1.

[0028] FIGS. 4A and 4B are conceptual views each illustrating a cross-section of a light-emitting element and the like to describe a method of mounting the light-emitting element in Example 1.

[0029] FIGS. 5A and 5B are conceptual views each illustrating a cross-section of the light-emitting element and the like to describe the method of mounting the light-emitting element in Example 1, subsequently to FIG. 4B.

[0030] FIGS. 6A and 6B are conceptual views each illustrating a cross-section of the light-emitting element and the like to describe the method of mounting the light-emitting element in Example 1, subsequently to FIG. 5B.

[0031] FIGS. 7A and 7B are conceptual views each illustrating a cross-section of the light-emitting element and the like to describe the method of mounting the light-emitting element in Example 1, subsequently to FIG. 6B.

[0032] FIGS. 8A and 8B are schematic partial end surface views of a vicinity of a through hole portion in Comparative Example 1A and Comparative Example 1B, respectively.

MODE FOR CARRYING OUT THE INVENTION

[0033] In the following, the present disclosure will be described on the basis of Examples with reference to the drawings, but note that the present disclosure is not limited to such Examples, and various values and various kinds of materials in Examples are just examples. Note that a description will be provided in the following order.

[0034] 1. General Description of Glass Wiring Substrate and Component-Mounted Glass Wiring Substrate according to First Aspect and Second Aspect of Present Disclosure

[0035] 2. Example 1 (Glass Wiring Substrate and Component-Mounted Glass Wiring Substrate according to First Aspect and Second Aspect of Present Disclosure) 3. Example 2 (Modification of Example 1) 4. Others

[0036]

[0037] In a component-mounted glass wiring substrate of the present disclosure,

[0038] electronic components can include a light-emitting element and a driving semiconductor device that drives the light-emitting element,

[0039] the light-emitting element can be mounted on one wiring portion of the first wiring portion or the second wiring portion, and

[0040] the driving semiconductor device can be mounted on the other wiring portion of the first wiring portion or the second wiring portion. Alternatively, the light-emitting element and the driving semiconductor device can be mounted on one or the other wiring portion of the first wiring portion or the second wiring portion.

[0041] A display apparatus substrate, to which the component-mounted glass wiring substrate of the present disclosure including the above-described preferable embodiment is applied, includes:

[0042] a glass substrate including a first surface and a second surface facing the first surface, having a first wiring portion formed on a first surface side, and having a second wiring portion formed on a second surface side;

[0043] a through hole formed in a region of the glass substrate in which neither the first wiring portion nor the second wiring portion is formed;

[0044] a through hole portion formed on an inner wall of the through hole, having one end extending to the first wiring portion, having the other end extending to the second wiring portion, and including a hollow portion corresponding to a central portion of the through hole; and

[0045] an electronic component mounted on at least one of the first wiring portion or the second wiring portion in which

[0046] the electronic component includes at least a light-emitting element, and

[0047] a filling member that blocks at least a part of the through hole is provided on a region surrounding an edge portion of the through hole of the first surface.

[0048] In addition, in such a display apparatus substrate,

[0049] the electronic component includes a light-emitting element and a driving semiconductor device that drives the light-emitting element,

[0050] the light-emitting element can be mounted on a light-emitting element attaching portion provided in one wiring portion of the first wiring portion or the second wiring portion, and

[0051] the driving semiconductor device can be mounted on a driving semiconductor device attaching portion provided in the other wiring portion of the first wiring portion or the second wiring portion. Alternatively, the light-emitting element and the driving semiconductor device can be mounted on the light-emitting element attaching portion and the driving semiconductor device attaching portion which are provided on one or the other wiring portion of the first wiring portion and the second wiring portion.

[0052] A method of manufacturing a glass wiring substrate, which is adapted to manufacture a component-mounted glass wiring substrate of the present disclosure, includes respective steps of:

[0053] preparing a glass substrate including a first surface and a second surface facing the first surface;

[0054] forming a through hole in a desired region of the glass substrate;

[0055] subsequently, forming first wiring on the first surface of the glass substrate, forming second wiring on the second surface of the glass substrate, forming a through hole portion which extends from a first wiring portion and a second wiring portion, is formed on an inner wall of the through hole, and includes a hollow portion corresponding to a central portion of the through hole; and thereafter,

[0056] providing, on a region surrounding an edge portion of the through hole of the first surface, a filling member that blocks at least a part of the through hole, in which

[0057] the filling member includes a glass material, or

[0058] when a linear expansion coefficient of the glass substrate is defined as CTE.sub.1 and a linear expansion coefficient of the filling member is defined as CTE.sub.2,

0.01.ltoreq.CTE.sub.2/CTE.sub.1.ltoreq.5

[0059] is satisfied.

[0060] There is a case where the glass wiring substrate according to the first aspect and the second aspect of the present disclosure, the glass wiring substrate according to the first aspect and the second aspect of the present disclosure constituting the component-mounted glass wiring substrate of the present disclosure, the glass wiring substrate according to the first aspect and the second aspect of the present disclosure constituting the display apparatus substrate, and the glass wiring substrate according to the first aspect and the second aspect of the present disclosure obtained by the method of manufacturing the glass wiring substrate will be collectively referred to as “glass wiring substrate and the like of the present disclosure”. Furthermore, there is a case where the glass wiring substrate according to the first aspect of the present disclosure, the glass wiring substrate according to the first aspect of the present disclosure constituting the component-mounted glass wiring substrate of the present disclosure, the glass wiring substrate according to the first aspect of the present disclosure constituting the display apparatus substrate, and the glass wiring substrate according to the first aspect of the present disclosure obtained by the method of manufacturing the glass wiring substrate will be collectively referred to as “glass wiring substrate and the like according to the first aspect of the present disclosure”.

[0061] In the glass wiring substrate and the like of the present disclosure, the filling member can extend through the inside of the through hole, and furthermore, the filling member can extend from the inside of the through hole onto a region surrounding an edge portion of the through hole of the second surface. Alternatively, in the glass wiring substrate and the like of the present disclosure, a second filling member including a glass material and blocking the through hole can be provided on the region surrounding the edge portion of the through hole of the second surface.

[0062] In the glass wiring substrate and the like according to the first aspect of the present disclosure including the above-described preferred embodiments and configurations, when the linear expansion coefficient of the glass substrate is defined as CTE.sub.1 and the linear expansion coefficient of the filling member is defined as CTE.sub.2,

0.01.ltoreq.CTE.sub.2/CTE.sub.1.ltoreq.5

[0063] can be satisfied.

[0064] Furthermore, in the glass wiring substrate and the like of the present disclosure including the above-described preferred embodiments and configurations, when a Young’s modulus of the glass substrate is defined as E.sub.1 and a Young’s modulus of the filling member is defined as E.sub.2,

0.1.ltoreq.E.sub.2/E.sub.1.ltoreq.10

[0065] can be satisfied.

[0066] In the display apparatus substrate, one pixel can include a light-emitting element unit that includes a plurality of light-emitting elements, and when the number of the plurality of light-emitting elements constituting one pixel is defined as “N”, a value of N can be 3 or more. An upper limit of the value of the number of light-emitting elements connected to one driving semiconductor device is not particularly limited as far as the driving semiconductor device can appropriately drive the light-emitting elements. Furthermore, when the number of light-emitting element units (total number of pixels) is defined as U.sub.0, a relation of [total number of light-emitting elements (total number of subpixels)=U.sub.0.times.N] is established.

[0067] The number, a type, mounting (arrangement), an interval, and the like of light-emitting elements constituting the light-emitting element unit are determined in accordance with, for example: a use and a function of a display apparatus including the display apparatus substrate (light-emitting element display apparatus); and specifications required in the display apparatus. In a case of a display apparatus for color display, one pixel (one pixel) in the display apparatus includes a combination (light-emitting element unit) of, for example, a red light-emitting element (red light-emitting subpixel), a green light-emitting element (green light-emitting subpixel), and a blue light-emitting element (blue light-emitting subpixel). Furthermore, a subpixel includes each light-emitting element. In addition, a plurality of light-emitting element units is arrayed in a two-dimensional matrix form in a first direction and a second direction orthogonal to the first direction. When the number of red light-emitting elements constituting the light-emitting element unit is defined as N.sub.R, the number of green light-emitting elements constituting the light-emitting element unit is defined as N.sub.G, and the number of blue light-emitting elements constituting the light-emitting element unit is defined as N.sub.B, N.sub.R can be an integer of 1 or 2 or more, N.sub.G can be an integer of 1 or 2 or more, and N.sub.B can be an integer of 1 or 2 or more. The values of N.sub.R, N.sub.G, and N.sub.B may be equal or may be different. In a case where each of the values of N.sub.R, N.sub.G, and N.sub.B is an integer of 2 or more, the light-emitting elements may be connected in series or may be connected in parallel in one light-emitting element unit. A combination of the values of (N.sub.R, N.sub.G, N.sub.B) is not limited, but (1,1,1), (1,2,1), (2,2,2), and (2,4,2) can be exemplified. In a case where one pixel includes three kinds of subpixels, exemplary arrays of the three kinds of subpixels can include a delta array, a stripe array, a diagonal array, and a rectangle array. In addition, it is only required to drive the light-emitting elements at constant current on the basis of a PWM driving method. Alternatively, three panels can be prepared, a first panel can include a light-emitting portion including the red light-emitting element, a second panel can include a light-emitting portion including the green light-emitting element, and a third panel can include a light-emitting portion including the blue light-emitting element, and thereby light from these three panels can be applied to a projector that collects the light by using, for example, a dichroic prism.

[0068] In the method of manufacturing the glass wiring substrate, the first wiring layer, the second wiring layer, and the through hole portion can be formed on the basis of a combination of an electroless plating process, an electrolytic plating process, and an etching process, more specifically, for example, a combination of an electroless copper plating process, an electrolytic copper plating process, and the etching process, and also can be formed on the basis of a combination of a PVD process, the electrolytic plating process, and the etching process. However, the formation of the through hole portion, the first wiring portion, and the second wiring portion is not limited to these processes, and it is also possible to adopt a combination of the PVD process such as a sputtering process or a vacuum deposition process, and the etching process. Alternatively, the first wiring portion or the second wiring portion can be formed on the first surface or the second surface of the glass substrate by: forming a metal layer (including an alloy layer) on the basis of the physical vapor deposition process (PVD process) on the first surface or the second surface of the glass substrate; and then patterning the metal layer, and the through hole portion and the second wiring portion or the first wiring portion can be formed on the basis of a plating process.

[0069] The first wiring portion may be provided in one layer, or may be provided in a plurality of layers such as two or more layers. That is, the first wiring portion may have a single-layer wiring structure or a multi-layer wiring structure. The second wiring portion may also be provided in one layer, or may be provided in a plurality of layers including two or more layers. That is, the second wiring portion may also have a single-layer wiring structure or a multi-layer wiring structure.

[0070] In the glass wiring substrate and the like of the present disclosure including the above-described various preferred embodiments and configurations, high strain point glass, soda glass (Na.sub.2O.CaO.SiO.sub.2), borosilicate glass (Na.sub.2O.B.sub.2O.sub.3.SiO.sub.2), forsterite (2MgO.SiO.sub.2), and lead glass (Na.sub.2O.PbO.SiO.sub.2) can be exemplified as the glass substrate. As a thickness of the glass substrate, for example, 0.1 mm to 1.1 mm can be exemplified.

[0071] The through hole in the glass substrate can be formed by using, for example, a laser. Specifically, for example, the through hole can be formed in the glass substrate on the basis of trepanning using a laser. Furthermore, the through hole having a tapered shape or a stepped shape can be formed by using the laser. Alternatively, the through hole can be formed by drilling, or the through hole can be formed by adopting sandblasting. Alternatively, it is possible to adopt a combination of these machining methods and the etching process.

[0072] As a method of mounting the light-emitting element on the light-emitting element attaching portion, the plating process can be exemplified, but not limited to thereto, and it is possible to exemplify other methods, for example, a reflow soldering process and a process using a solder ball or a solder bump. Furthermore, as a method of mounting the driving semiconductor device on the driving semiconductor device attaching portion, the reflow soldering process can be exemplified, but not limited thereto, and it is also possible to exemplify other methods, for example, the plating process or the process using a solder ball or a solder bump.

[0073] In the glass wiring substrate and the like of the present disclosure including the above-described various preferred embodiments and configurations, the light-emitting element can include a light-emitting diode (LED), but not limited thereto, and the light-emitting element can include other components such as a semiconductor laser element or the like. In a case where the light-emitting diode or the semiconductor laser element constitute the light-emitting element, a size of the light-emitting element (e.g., a chip size) is not particularly limited, but typically, the size is minute, specifically, for example, 1 mm or less, or for example, 0.3 mm or less, or for example, 0.1 mm or less, or more specifically, 0.03 mm or less. As a material constituting light-emitting layers of the red light-emitting element that emits red light, the green light-emitting element that emits green light, and the blue light-emitting element that emits blue light, it is possible to exemplify a material using a III-V group compound semiconductor, for example, and furthermore, as an example of a material constituting the light-emitting layer of the red light-emitting element, it is also possible to exemplify a material using an AlGaInP-based compound semiconductor, for example. Examples of the III-V group compound semiconductor can include, for example, a GaN-based compound semiconductor (including an AlGaN mixed crystal or an AlGaInN mixed crystal, and a GaInN mixed crystal), a GaInNAs-based compound semiconductor (including a GalnAs mixed crystal or a GaNAs mixed crystal), an AlGaInP-based compound semiconductor, an AlAs-based compound semiconductor, an AlGaInAs-based compound semiconductor, an AlGaAs-based compound semiconductor, a GalnAs-based compound semiconductor, a GaInAsP-based compound semiconductor, a GaInP-based compound semiconductor, a GaP-based compound semiconductor, an InP-based compound semiconductor, an InN-based compound semiconductor, and an AlN-based compound semiconductor.

[0074] The light-emitting layer has a laminated structure including a first compound semiconductor layer having a first conductivity type, an active layer, and a second compound semiconductor layer having a second conductivity type different from the first conductivity type. Note that, in a case where the first conductivity type is an n-type, the second conductivity type is a p-type, and in a case where the first conductivity type is the p-type, the second conductivity type is the n-type. Examples of n-type impurities to be added to a compound semiconductor layer can include, for example, silicon (Si), selenium (Se), germanium (Ge), tin (Sn), carbon (C), and titanium (Ti), and examples of p-type impurities can include zinc (Zn), magnesium (Mg), beryllium (Be), cadmium (Cd), calcium (Ca), barium (Ba), and oxygen (O). The active layer may include a single compound semiconductor layer, or may have a single quantum well structure (SQW structure) or a multiple quantum well structure (MQW structure). Examples of a method of forming (depositing) various kinds of compound semiconductor layers including the active layer can include a metal-organic chemical vapor deposition process (MOCVD process, MOVPE process), a metal-organic molecular beam epitaxy process (MOMBE process), a hydride vapor phase epitaxy process (HVPE process) in which halogen contributes to transport or reaction, a plasma-assisted physical vapor deposition process (PPD process), an atomic layer deposition process (ALD process, atomic layer deposition process), and a migration-enhanced. epitaxy process (MEE process). It is only required to select, as appropriate, the above-described compound semiconductors and compositions thereof in order to manufacture the red light-emitting element, the green light-emitting element, and the blue light-emitting element.

[0075] In a case where the first conductivity type is the n-type and the second conductivity type is the p-type, a first electrode is an n-side electrode and a second electrode is a p-side electrode. On the other hand, in a case where the first conductivity type is the p-type and the second conductivity type is the n-type, the first electrode is the p-side electrode and the second electrode is the n-side electrode. Here, examples of the p-side electrode can include Au/AuZn, Au/Pt/Ti(/Au)/AuZn, Au/Pt/TiW(/Ti) (/Au)/AuZn, Au/AuPd, Au/Pt/Ti(/Au)/AuPd, Au/Pt/TiW(/Ti) (/Au)/AuPd, Au/Pt/Ti, Au/Pt/TiW(/Ti), Au/Pt/TiW/Pd/TiW(/Ti), Ti/Cu, Pt, Ni, Ag, and Ge. Furthermore, examples of the n-side electrode can include Au/Ni/AuGe, Au/Pt/Ti(/Au)/Ni/AuGe, AuGe/Pd, Au/Pt/TiW(/Ti)/Ni/AuGe, and Ti. Note that a layer specified before “/” is located electrically more distant from the active layer. Alternatively, the second electrode can include a transparent conductive material such as ITO, IZO, ZnO:Al, and ZnO:B. In a case where a layer including the transparent conductive material is used as a current diffusion layer and the second electrode is the n-side electrode, a metal laminated structure exemplified in the case where the second electrode is the p-side electrode may be combined. A first pad portion may be formed on (a surface of) the first electrode, and a second pad portion may be formed on (a surface of) the second electrode. It is desirable that each pad portion have a single layer configuration or a multi-layer configuration including at least one kind of metal selected from a group including Ti (titanium), aluminum (Al), Pt (platinum), Au (gold), and Ni (nickel). Alternatively, each pad portion can have a multi-layer configuration exemplified by a multi-layer configuration of Ti/Pt/Au and a multi-layer configuration of Ti/Au.

[0076] As a light-emitting element manufacturing substrate to manufacture the light-emitting element, it is possible to exemplify a GaAs substrate, a GaP substrate, an AIN substrate, an AlP substrate, an InN substrate, an InP substrate, an AlGaInN substrate, an AlGaN substrate, an AlInN substrate, a GaInN substrate, an AlGaInP substrate, an AlGaP substrate, an AlInP substrate, a GaInP substrate, a ZnS substrate, a sapphire substrate, a SiC substrate, an alumina substrate, a ZnO substrate, a LiMgO substrate, a LiGaO.sub.2 substrate, a MgAl.sub.20.sub.4 substrate, a Si substrate, a Ge substrate, and a substrate on which an underlayer or a buffer layer is formed on a surface (main surface) of these substrates. Note that it is only required to make a selection from these substrates as appropriate to manufacture the red light-emitting element, the green light-emitting element, and the blue light-emitting element.

[0077] In each light-emitting element, a light-shielding film may be formed in a desired region of the light-emitting element such that an undesired region is not irradiated with light emitted from the light-emitting element. Examples of a material constituting the light-shielding film can include a material capable of shielding the light, such as titanium (Ti), chromium (Cr), tungsten (W), tantalum (Ta), aluminum (Al), MoSi.sub.2, and the like.

[0078] As the light-emitting elements constituting the light-emitting element unit, a fourth light-emitting element, a fifth light-emitting element, … may be further added to a first light-emitting element, a second light-emitting element, and a third light-emitting element. As such examples, it is possible to exemplify: a light-emitting element unit to which a subpixel that emits white light is added in order to improve, for example, luminance; a light-emitting element unit to which a subpixel that emits complementary color light is added in order to enlarge a color reproduction range; a light-emitting element unit to which a subpixel that emits yellow light is added in order to enlarge the color reproduction range; and a light-emitting element unit to which a subpixel that emits yellow light and cyan light is added in order to enlarge the color reproduction range.

[0079] It is possible to achieve a tiled display apparatus substrate and a display apparatus (light-emitting element display apparatus) each formed by arraying a plurality of component-mounted glass wiring substrates (display apparatus substrates). Alternatively, the component-mounted glass wiring substrate (display apparatus substrate) can be applied to a backlight, a lighting apparatus, an advertisement medium, and the like using light-emitting diodes.

[0080] The display apparatus (light-emitting element display apparatus) can be not only a flat type/direct view type image display apparatus of color display represented by a television receiver and a computer terminal but also an image display apparatus that projects an image on a retina of a human being, and a projection type image display apparatus. Note that, in these image display apparatuses, it is only required to adopt a field sequential driving method whereby an image is displayed by controlling, for example, light emission/non-light emission states of each of the first light-emitting element, the second light-emitting element, and the third light-emitting element in a time-sharing manner, but not limited to thereto.

EXAMPLE 1

[0081] Example 1 relates to the glass wiring substrate and the component-mounted glass wiring substrate of the present disclosure according to the first aspect and the second aspect of the present disclosure.

[0082] As illustrated in a schematic partial end surface view of FIG. 1, the glass wiring substrate, the component-mounted glass wiring substrate, or the display apparatus substrate of Example 1 includes:

[0083] a glass substrate 10 including a first surface 10A and a second surface 10B facing the first surface 10A, having a first wiring portion 20 formed on a first surface side, and having a second wiring portion 30 formed on a second surface side;

[0084] a through hole 40 formed in a region of the glass substrate 10 in which neither the first wiring portion 20 nor the second wiring portion 30 is formed; and

[0085] a through hole portion 42 formed on an inner wall 41 of the through hole 40, having one end extending to the first wiring portion 20, having the other end extending to the second wiring portion 30, and including a hollow portion 43 corresponding to a central portion of the through hole 40, in which

[0086] a filling member 61 that blocks at least a part of the through hole 40 (an upper end portion of the through hole 40 in the example illustrated. The similar is applied to the following description of Example 1) is provided on a region 10C surrounding an edge portion of the through hole 40 of the first surface 10A.

[0087] In addition, the filling member 61 includes a glass material, or alternatively, when a linear expansion coefficient of the glass substrate 10 is defined as CTE.sub.1 and a linear expansion coefficient of the filling member 61 is defined as CTE.sub.2,

0.01.ltoreq.CTE.sub.2/CTE.sub.1.ltoreq.5

[0088] is satisfied.

[0089] Furthermore, the component-mounted glass wiring substrate of Example 1 includes:

[0090] the glass substrate 10 including the first surface 10A and the second surface 10B facing the first surface 10A, having the first wiring portion 20 formed on the first surface side, and having the second wiring portion 30 formed on the second surface side;

[0091] the through hole 40 formed in the region of the glass substrate 10 in which neither the first wiring portion 20 nor the second wiring portion 30 is formed;

[0092] the through hole portion 42 formed on the inner wall 41 of the through hole 40, having one end extending to the first wiring portion 20, having the other end extending to the second wiring portion 30, and including the hollow portion 43 corresponding to the central portion of the through hole 40; and

[0093] an electronic component mounted on at least one of the first wiring portion 20 or the second wiring portion 30, in which

[0094] the filling member 61 that blocks at least a part of the through hole 40 is provided on the region 10C surrounding the edge portion of the through hole 40 of the first surface 10A,

[0095] the filling member 61 includes a glass material, or

[0096] when the linear expansion coefficient of the glass substrate 10 is defined as CTE.sub.1 and the linear expansion coefficient of the filling member 61 is defined as CTE.sub.2,

0.01.ltoreq.CTE.sub.2/CTE.sub.1.ltoreq.5

[0097] is satisfied.

[0098] Moreover, the display apparatus substrate, to which the component-mounted glass wiring substrate of Example 1 is applied, includes:

[0099] the glass substrate 10 including the first surface 10A and the second surface 10B facing the first surface 10A, having the first wiring portion 20 formed on the first surface side, and having the second wiring portion 30 formed on the second surface side;

[0100] the through hole 40 formed in the region of the glass substrate 10 in which neither the first wiring portion 20 nor the second wiring portion 30 is formed;

[0101] the through hole portion 42 formed on the inner wall 41 of the through hole 40, having one end extending to the first wiring portion 20, having the other end extending to the second wiring portion 30, and including the hollow portion 43 corresponding to the central portion of the through hole 40; and

[0102] an electronic component mounted on at least one of the first wiring portion 20 or the second wiring portion 30, in which

[0103] the electronic component includes at least a light-emitting element,

[0104] the filling member 61 that blocks at least a part of the through hole 40 is provided on the region surrounding the edge portion of the through hole 40 of the first surface 10A,

[0105] the filling member 61 includes a glass material, or

[0106] when the linear expansion coefficient of the glass substrate 10 is defined as CTE.sub.1 and the linear expansion coefficient of the filling member 61 is defined as CTE.sub.2,

0.01.ltoreq.CTE.sub.2/CTE.sub.1.ltoreq.5

[0107] is satisfied.

[0108] Here, in Example 1, the filling member 61 is provided on the first surface side and blocks a part of the through hole 40 in the illustrated example. However, not limited thereto, the filling member 61 may be provided on the second surface side. The first wiring portion 20, the second wiring portion 30, and the through hole portion 42 include the same material (specifically, copper). A value of the linear expansion coefficient CTE.sub.1 of the glass substrate 10 having a thickness of 0.1 mm to 1.0 mm, a value of the linear expansion coefficient CTE.sub.2 of the filling member 61 including the glass material, and a value of a linear expansion coefficient CTE.sub.3 of the copper constituting the first wiring portion 20, the second wiring portion 30, and the through hole portion 42 are as follows.

[0109] Furthermore, when a Young’s modulus of the glass substrate 10 is defined as E.sub.1 and a Young’s modulus of the filling member 61 is defined as E.sub.2,

0.1.ltoreq.E.sub.2/E.sub.1.ltoreq.10

[0110] is satisfied. Values of E.sub.1 and E.sub.2 are exemplified below. Moreover, values of a linear expansion coefficient CTE.sub.4 and a Young’s modulus E.sub.4 of a solder resist material as described later are exemplified below.

[0111] CTE.sub.1: 3.17.times.10.sup.-6/K

[0112] CTE.sub.2: 10.times.10.sup.-6/K

[0113] CTE.sub.3: 17.4.times.10.sup.-6/K

[0114] CTE.sub.4: 16.times.10.sup.-6/K

[0115] E.sub.1: 73.6 GPa

[0116] E.sub.2: 40 GPa

[0117] E.sub.3: 130 GPa

[0118] E.sub.4: 11 GPa

[0119] Furthermore, in the component-mounted glass wiring substrate or the display apparatus substrate of Example 1,

[0120] the electronic components include a light-emitting element (specifically, a light-emitting diode (LED)) 51 and a driving semiconductor device 52 that drives the light-emitting elements 51,

[0121] the light-emitting element 51 is mounted on one wiring portion of the first wiring portion 20 or the second wiring portion 30 (specifically, the first wiring portion 20 in Example 1), and

[0122] the driving semiconductor device 52 is mounted on the other wiring portion of the first wiring portion 20 or the second wiring portion 30 (specifically, the first wiring portion 20 in Example 1).

[0123] The light-emitting element 51 may be mounted on the second wiring portion 30, and the driving semiconductor device 52 may be mounted on the first wiring portion 20.

[0124] Various other electronic components are mounted on the first wiring portion 20 and the second wiring portion 30, but illustration thereof is omitted. The light-emitting elements 51 is connected to the driving semiconductor device 52 via a light-emitting element attaching portions 21 provided on one wiring portion (specifically, the first wiring portion 20 in Example 1), the first wiring portion 20, the through hole portion 42, the second wiring portion 30, a driving semiconductor device attaching portion 31 provided on the other wiring portion (specifically, the second wiring portion 30 in Example 1), and an attaching terminal portion 53. The light-emitting element attaching portions 21 is provided on an insulation layer 22 formed on the first surface 10A of the glass substrate 10, and a plated layer 23 is formed on a top surface of the light-emitting element attaching portion 21. As a method of mounting the light-emitting element 51 on the light-emitting element attaching portion 21, the plating process can be exemplified, and as a method of mounting the driving semiconductor device 52 on the driving semiconductor device attaching portion 31, the reflow soldering process can be exemplified, but not limited thereto, and it is also possible to exemplify other methods, for example, the process using a solder ball or a solder bump. The second wiring portion 30 is further connected to a display apparatus drive circuit provided outside. Alternatively, in a case of forming a tiled display apparatus substrate or a display apparatus (light-emitting element display apparatus) formed by arraying the plurality of component-mounted glass wiring substrates (display apparatus substrates), the second wiring portion 30 is further connected to an adjacent component-mounted glass wiring substrate (display apparatus substrate) via, for example, a connector or an anisotropic conductive material.

[0125] One pixel includes the light-emitting element unit 50. In addition, the number of the plurality of light-emitting elements 51 connected to the one driving semiconductor device 52 can be, for example, three hundred. Note that FIG. 1 illustrates a state in which one light-emitting element 51 (51G) is connected to the one driving semiconductor device 52. In the display apparatus substrate of Example 1, one pixel (one pixel) includes, for example, a combination (the light-emitting element 50) including one red light-emitting element 51R, one green light-emitting element 51G, and one blue light-emitting element 51B. That is, N.sub.R=N.sub.G=N.sub.B=1. The subpixel includes each light-emitting element 51. In addition, a plurality of light-emitting element units 50 is arrayed in a two-dimensional matrix form in a first direction and a second direction orthogonal to the first direction. As a size of one light-emitting element 51, specifically, 30 .mu.m.times.30 .mu.m can be exemplified, and as a size of the light-emitting element unit 50, specifically, 0.1 mm.times.0.1 mm can be exemplified, but not limited to these values.

[0126] As illustrated in a schematic partial end surface view of FIG. 3A or 3B, the light-emitting element (specifically, the light-emitting diode) 51 includes a light-emitting layer 120, a first electrode 131, and a second electrode 132 electrically connected the light-emitting layer 120. Here, the light-emitting layer 120 has a laminated structure including a first compound semiconductor layer 121 having the first conductivity type (specifically, p-type), an active layer 123, and a second compound semiconductor layer 122 having the second conductivity type (specifically, n type) different from the first conductivity type. The light emitted from the active layer 123 is emitted to the outside through the second compound semiconductor layer 122. The light-emitting element 51 includes a red light-emitting element 51R, a green light-emitting element 51G, or a blue light-emitting element 51B. Specific configurations of the red light-emitting element 51R, the green light-emitting element 51G, and the blue light-emitting element 51B are, for example, as illustrated in Tables 1 and 2 below. Note that the light-emitting element illustrated in FIG. 3A differs from the light-emitting element illustrated in FIG. 3B in an arrangement position of the second electrode 132. Furthermore, a light-emitting element manufacturing substrate 210 described next is eventually removed.

[0127] That is, in the red light-emitting element 51R, the light-emitting layer (laminated structure) 120 including the second compound semiconductor layer 122 having the n-type conductivity type, the active layer 123, and the first compound semiconductor layer 121 having the p-type conductivity type includes an AlGaInP-based compound semiconductor. An n-GaAs substrate is used as the light-emitting element manufacturing substrate 210 to manufacture the red light-emitting element 51R. The second compound semiconductor layer 122 is formed on the light-emitting element manufacturing substrate 210. The active layer 123 has the multiple quantum well structure in which a well layer including a GaInP layer or an AlGaInP layer and a barrier layer including an AlGaInP layer having a different composition are laminated, and specifically, four barrier layers and three well layers are provided. In addition, the first electrode 131 is formed on a top surface of the first compound semiconductor layer 121, and a first pad portion 133 is formed on the first electrode 131. Furthermore, the second electrode 132 is formed on a top surface of the second compound semiconductor layer 122, and a second pad portion 134 is formed on the second electrode 132.

TABLE-US-00001 TABLE 1 Red light-emitting element 51R First compound semiconductor layer Contact layer p-GaAs: Zn-doped Second clad layer p-AlInP: Zn-doped Second guide layer AlGaInP Active layer Well layer/Barrier layer GaInP/AlGaInP Second compound semiconductor layer First guide layer AlGaInP First clad layer n-AlInP: Si-doped

[0128] In the green light-emitting element 51G and the blue light-emitting element 51B, the light-emitting layer (laminated structure) 120 including the second compound semiconductor layer 122 having the n-type conductivity type, the active layer 123, and the first compound semiconductor layer 121 having the p-type conductivity type includes a GaInN-based compound semiconductor. An n-GaN substrate is used as the light-emitting element manufacturing substrate 210 in order to manufacture the green light-emitting element 51G and the blue light-emitting element 51B. The second compound semiconductor layer 122 is formed on the light-emitting element manufacturing substrate 210. The active layer 123 has a quantum well structure in which a well layer including an AlInGaN layer and a barrier layer including an AlInGaN layer having a different In composition are laminated, or alternatively, has a quantum well structure in which a well layer including an InGaN layer and a barrier layer including a GaN layer are laminated.

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